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NASA NTRS ยท 19770035430

Intensified charge coupled devices for ultra low light level imaging

Abstract

Development of a sensor incorporating a CCD and photocathode for operation in the electron bombarded mode in both a magnetic and an electrostatic focussed, gated configuration is described. Initial format size is 100 x 160 pixels with eventual growth to 400 x 400 pixels. The sensor is part of a digital camera system which includes the low level video conditioning electronics, a camera controller, a high speed buffer memory, and digital recording and display electronics. The memory uses CMOS/SOS and has a capacity of 1.6 Mbits with operating rates of 48 Mbits/sec. Individual frames are co-added to provide wide dynamic range and photometric precision better than 1%. A 4-bit video quantization is used to increase the photon counting detection rate before coincidence losses become serious.

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BibTeXRIS

Sobieski, S.. 1976-01-01. Intensified charge coupled devices for ultra low light level imaging. https://ntrs.nasa.gov/citations/19770035430

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