NASA NTRS · 19770036910
Tunnel injection into gate oxide traps
Abstract
An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.
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Maserjian, J., Kaw, R., Collier, J.. 1975-01-01. Tunnel injection into gate oxide traps. https://ntrs.nasa.gov/citations/19770036910
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