NASA NTRS · 19780003355
JAN transistor and diode characterization test program, JANTX diode 1N5619
Abstract
A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point, and highest reading.
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Takeda, H.. 1977-02-01. JAN transistor and diode characterization test program, JANTX diode 1N5619. https://ntrs.nasa.gov/citations/19780003355
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