Cyclic and low temperature effects on microcircuits

Abstract

Cyclic temperature and low temperature operating life tests, and pre-/post-life device evaluations were used to determine the degrading effects of thermal environments on microcircuit reliability. Low power transistor-transistor-logic gates and linear devices were included in each test group. Device metallization systems included aluminum metallization/aluminum wire, aluminum metallization/gold wire, and gold metallization/gold wire. Fewer than 2% electrical failures were observed during the cyclic and low temperature life tests and the post-life evaluations revealed approximately 2% bond pull failures. Reconstruction of aluminum die metallization was observed in all devices and the severity of the reconstruction appeared to be directly related to the magnitude of the temperature excursion. All types of bonds except the gold/gold bonds were weakened by exposure to repeated cyclic temperature stress.