NASA NTRS · 19780027148
Improved GaAs solar cells with very thin junctions
Abstract
Violet cells with 500-1000 A junction depths have been made in GaAs by narrow junction diffusion followed by anodization. The best AM0 efficiencies obtained by this technique have been 10.5% (14% at AM1). GaAlAs-GaAs structures with very thin GaAlAs layers are much more promising, and efficiencies of over 18% at AM0 have been measured (21.9% at AM1).
Keep this discovery
Explore connections, maps & timelines
Hovel, H. J., Woodall, J. M.. 1976-01-01. Improved GaAs solar cells with very thin junctions. https://ntrs.nasa.gov/citations/19780027148
Cite the original work for its findings. Save a collection to share your selection of sources.