NASA NTRS · 19780044223
Time-delay-and-integration charge-coupled devices using tin oxide gate technology
Abstract
Doped tin oxide gates are used in a time-delay-and-integration (TDI) CCD scheme in an effort to develop a stable transparent gate technology. Design characteristics of the system are discussed, including 2 sections of 10 by 9 integration stages, four-phase buried channel construction, and 10 input parallel-in/serial-out output shift register at a video rate of 1.25 MHz. A quantum efficiency of 65% with smooth spectral response is attained by front surface imaging. The suitability of the system for the Landsat program is discussed in terms of TDI-CCD operating parameters.
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Thompson, L. L., Mccann, D. H., Tracy, R. A., Kub, F. J., White, M. H.. 1978-02-01. Time-delay-and-integration charge-coupled devices using tin oxide gate technology. https://ntrs.nasa.gov/citations/19780044223
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