NASA NTRS · 19780045286
Diffusion lengths in amphoteric GaAs heteroface solar cells
Abstract
Minority-carrier diffusion lengths in amphoteric GaAs:Si were investigated. Electron and hole diffusion lengths in p- and n-type, respectively, were determined to be 13 microns and 7 microns. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs:Si p-n junctions indicated that these devices should make excellent solar cells.
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Ashley, K. L., Beal, S. W.. 1978-03-15. Diffusion lengths in amphoteric GaAs heteroface solar cells. https://ntrs.nasa.gov/citations/19780045286
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