NASA NTRS · 19790000308
Measuring charge nonuniformity in MOS devices
Abstract
Convenient method of determining inherent lateral charge non-uniformities along silicon dioxide/silicon interface of metal-oxide-semiconductor (MOS) employs rapid measurement of capacitance of interface as function of voltage at liquid nitrogen temperature. Charge distribution is extracted by fast-Fourier-transform analysis of capacitance voltage (C-V) measurement.
Keep this discovery
Explore connections, maps & timelines
Maserjian, J., Zamani, N.. 1980-04-01. Measuring charge nonuniformity in MOS devices. https://ntrs.nasa.gov/citations/19790000308
Cite the original work for its findings. Save a collection to share your selection of sources.