NASA NTRS · 19790000488
Germanium-on-InP heterojunction-structure LED
Abstract
Ge-on-InP heterojunction structure LED has been developed where in Ge film is evaporated onto commercially available InP substrate. Forward bias of device is approximately 1 volt, and it emits light in 9.800 angstrom region. Technique permits easy and inexpensive fabrication of LED for application at this wavelength.
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Hawrylo, F. Z.. 1980-06-01. Germanium-on-InP heterojunction-structure LED. https://ntrs.nasa.gov/citations/19790000488
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