NASA NTRS · 19790000490
Ohmic contact to p-type indium phosphide
Abstract
Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.
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Hawrylo, F. Z.. 1980-06-01. Ohmic contact to p-type indium phosphide. https://ntrs.nasa.gov/citations/19790000490
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