NASA NTRS · 19790000558
Scratch encourages selective doping
Abstract
Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.
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Hawrylo, F. Z., Kressel, H.. 1980-06-01. Scratch encourages selective doping. https://ntrs.nasa.gov/citations/19790000558
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