NASA NTRS ยท 19790010025
Diode step stress program for JANTX1N5554
Abstract
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when applied to a variety of semiconductor devices. The switching diode JANTX1N5554 is examined.
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1979-01-01. Diode step stress program for JANTX1N5554. https://ntrs.nasa.gov/citations/19790010025
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