NASA NTRS · 19790010029
Transistor step stress testing program for JANTX2N4856
Abstract
The effect of power/temperature step stress when applied to a field effect transistor JANTX2N4856 manufactured by Texas Instruments and Teledyne was evaluated. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control units were maintained for verification of the electrical parametric testing.
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1979-01-01. Transistor step stress testing program for JANTX2N4856. https://ntrs.nasa.gov/citations/19790010029
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