NASA NTRS · 19790010033
Transistor step stress program for JANTX2N4150
Abstract
Reliability analysis of the transistor JANTX2N4150 manufactured by General Semiconductor and Transitron is reported. The discrete devices were subjected to power and temperature step stress tests and then to electrical tests after completing the power/temperature step stress point. Control sample units were maintained for verification of the electrical parametric testing. Results are presented.
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1979-02-01. Transistor step stress program for JANTX2N4150. https://ntrs.nasa.gov/citations/19790010033
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