NASA NTRS · 19790010037
Diode step stress program for JANTX1N5552
Abstract
The effect of power/temperature step stress when applied to the switching diode JANTX1N5554 manufactured by Semtech and Micro Semiconductor was evaluated. A total of 48 samples from each manufacturer were submitted to the process outlined. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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1979-01-01. Diode step stress program for JANTX1N5552. https://ntrs.nasa.gov/citations/19790010037
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