NASA NTRS · 19790010040
Diode step stress program for JANTX1N5615
Abstract
The effect of power/temperature step stress when applied to the switching diode JANTX1N5615 manufactured by Semtech and Micro semiconductor was examined. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. All test samples were subjected to the electrical tests after completing the prior power/temperature step stress point. Results are presented.
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1979-01-01. Diode step stress program for JANTX1N5615. https://ntrs.nasa.gov/citations/19790010040
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