NASA NTRS · 19790010049
Diode step stress program for JANTX1N3893
Abstract
Data for the purpose of evaluating the effect of power/temperature step stress on the diode JANTX1N3893 manufactured by Siemens and Motorola is presented. A total of 48 samples from each manufacturer were submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing.
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1979-01-01. Diode step stress program for JANTX1N3893. https://ntrs.nasa.gov/citations/19790010049
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