NASA NTRS · 19790010050
Diode step stress program for JANTX1N649-1
Abstract
The effect of power/temperature step stress when applied to a variety of semiconductor devices is evaluated. A total of 48 samples were submitted to be processed. Control sample units were maintained for verification of the electrical parametric testing. The test circuit was used to power all of the test devices during the power/temperature stress conditions.
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1979-01-01. Diode step stress program for JANTX1N649-1. https://ntrs.nasa.gov/citations/19790010050
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