NASA NTRS · 19790010076
Diode step stress testing program for JANTX1N2989B
Abstract
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured by Siemens and General Semiconductor is reported. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parameteric testing.
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1979-02-01. Diode step stress testing program for JANTX1N2989B. https://ntrs.nasa.gov/citations/19790010076
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