NASA NTRS · 19790010080
Transistor step stress testing program for JANTX2N2369A
Abstract
The effect is reported of power/temperature step stress when applied to the transistor JANTX2N2369A manufactured by Raytheon and National Semiconductor. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The power/thermal stress tests are described, and failure analyses are presented.
Keep this discovery
Explore connections, maps & timelines
1979-01-01. Transistor step stress testing program for JANTX2N2369A. https://ntrs.nasa.gov/citations/19790010080
Cite the original work for its findings. Save a collection to share your selection of sources.