NASA NTRS ยท 19800000020
JANTX2N2369A transistor
Abstract
Report describes effects of power and temperature overstress on National Semiconductor and Raytheon transistors. Good junction quality was maintained. Gain losses predominated. Other failures are reported.
Keep this discovery
Explore connections, maps & timelines
1980-08-01. JANTX2N2369A transistor. https://ntrs.nasa.gov/citations/19800000020
Cite the original work for its findings. Save a collection to share your selection of sources.