NASA NTRS · 19800000022
JANTX2N2484 transistor
Abstract
Report evaluates effects of power and temperature overstress on Raytheon and Teledyne devices. Power overstress produced few failures. Both lots of devices exceeded 50 percent failure at 250 deg C. Failure modes are evaluated.
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1980-08-01. JANTX2N2484 transistor. https://ntrs.nasa.gov/citations/19800000022
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