NASA NTRS · 19800000026
JANTX2N2945A transistor
Abstract
Report describes effects of power and temperature overstress on Raytheon and Teledyne devices. Increasing T in 16 hour steps damaged both manufacturers' lots. Raytheon lot exceeded 50 percent failure rate 160 hours before completion of test due to current gain failure. Teledyne samples completed test but had more catastrophic failures.
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1980-08-01. JANTX2N2945A transistor. https://ntrs.nasa.gov/citations/19800000026
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