NASA NTRS · 19800000027
JANTX2N3637 transistor
Abstract
Report describes effects of power and temperature overstress on Transitron and Motorola devices. Transitron batches exceeded 50 percent failure in power overstress and 160 hour temperature stress. Design differences are evaluated.
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1980-08-01. JANTX2N3637 transistor. https://ntrs.nasa.gov/citations/19800000027
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