NASA NTRS · 19800000263
Ohmic contact to GaAs semiconductor
Abstract
Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.
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Hovel, H. J., Woodall, J. M.. 1980-09-01. Ohmic contact to GaAs semiconductor. https://ntrs.nasa.gov/citations/19800000263
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