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NASA NTRS · 19800021351

Thin n-i-p radiation-resistant solar cell feasibility study

Abstract

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

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BibTeXRIS

Allison, J. F., Arndt, R. A., Meulenberg, A., Jr.. 1980-06-01. Thin n-i-p radiation-resistant solar cell feasibility study. https://ntrs.nasa.gov/citations/19800021351

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