NASA NTRS · 19800044756
A dc model for power switching transistors suitable for computer-aided design and analysis
Abstract
The proposed dc model for bipolar junction power switching transistors is based on measurements which may be made with standard laboratory equipment. Those nonlinearities which are of importance to power electronics design are emphasized. Measurements procedures are discussed in detail. A model formulation adapted for use with a computer program is presented, and a comparison between actual and computer-generated results is made.
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Wilson, P. M., George, R. T., Jr., Owen, H. A., Jr., Wilson, T. G.. 1979-01-01. A dc model for power switching transistors suitable for computer-aided design and analysis. https://ntrs.nasa.gov/citations/19800044756
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