NASA NTRS · 19810000109
IC Capacitors on Groups III-to-V Substrates
Abstract
Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.
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Alcorn, G. E., Jones, R.. 1982-09-01. IC Capacitors on Groups III-to-V Substrates. https://ntrs.nasa.gov/citations/19810000109
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