FETSIM user's manual and example

Abstract

A batch program written in FORTRAN IV which does D.C. and transient analysis of MOS circuits is presented. Circuits employing N-MOS transistors and/or P-MOS transistors in either a bulk technology or an SOS technology, or almost any combination of R-C elements may be analyzed. The program requires as input data the complete circuit topology, device parameters, process parameters, and control parameters. The user can specify initial node conditions and the input pulse format. For example, pulse rise time, fall time, width and time between succeeding pulses are all independently controllable. The program contains a sophisticated mathematical model that can accurately handle either NMOS, P-MOS, Bulk or SOS devices. Sensitivity to process changes is maintained by requiring such process parameters as threshold voltage and doping level as program inputs.