NASA NTRS ยท 19810009045
Radiation Damage Workshop report
Abstract
The starting material, cell design/geometry, and cell processing/fabrication for silicon and gallium arsenide solar cells are addressed with reference to radiation damage. In general, it is concluded that diagnostic sensitivities and material purities are basic to making significant gains in end-of-life performance and thermal annealability. Further, GaAs material characterization is so sketchy that a well defined program to evaluate such material for solar cell application is needed to maximize GaAs cell technology benefits.
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Rahilly, W. P.. 1980-01-01. Radiation Damage Workshop report. https://ntrs.nasa.gov/citations/19810009045
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