Practical aspects of silicon float zone crystal growth

Abstract

The float zone (FZ) growth method for silicon crystallization has advantages and disadvantages when compared to the other principal growth method, the Czochralski (CZ) technique. CZ growth is attractive for the following reasons: large diameters, high single crystal yields, low thermal gradients, low operator skill requirements, efficient power utilization, and low feed material costs. Some areas where FZ growth is advantageous include high purity, axial resistivity uniformity (on a macroscale), visibility of the growth region, low consumable material costs, and high growth rates.