NASA NTRS · 19810010626
Future float zone development in industry
Abstract
The present industrial requirements for float zone silicon are summarized. Developments desired by the industry in the future are reported. The five most significant problems faced today by the float zone crystal growth method in industry are discussed. They are economic, large diameter, resistivity uniformity, control of carbon, and swirl defects.
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Sandfort, R. M.. 1980-12-01. Future float zone development in industry. https://ntrs.nasa.gov/citations/19810010626
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