NASA NTRS · 19810032166
Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers
Abstract
Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.
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Botez, D., Connolly, J. C.. 1980-12-04. Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers. https://ntrs.nasa.gov/citations/19810032166
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