Continuous coating of silicon-on-ceramic

Abstract

Growth of sheet silicon on low-cost substrates has been demonstrated by the silicon coating with inverted meniscus (SCIM) technique. A mullite-based ceramic substrate is coated with carbon and then passed over a trough of molten silicon with a raised meniscus. Solidification occurs at the trailing edge of the downstream meniscus, producing a silicon-on-ceramic (SOC) layer. Meniscus shape and stability are controlled by varying the level of molten silicon in a reservoir connected to the trough. The thermal conditions for growth and the crystallographic texture of the SOC layers are similar to those produced by dip-coating, the original technique of meniscus-controlled growth. The thermal conditions for growth have been analyzed in some detail. The analysis correctly predicts the velocity-thickness relationship and the liquid-solid interface shape for dip-coating, and appears to be equally applicable to SCIM-coating. Solar cells made from dip-coated SOC material have demonstrated efficiencies of 10% on 4-sq cm cells and 9.9% on 10-sq cm cells.