NASA NTRS · 19820000167
Etchant for HgxCd1-xTe Crystals
Abstract
Preferential etching by mixture of nitric and hydrochloric acids reveals crystal dislocation defects (type D) and impurity-dislocation defects (type S) in these crystals, which have optical and electrical applications.
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Irene, E. A.. 1983-03-01. Etchant for HgxCd1-xTe Crystals. https://ntrs.nasa.gov/citations/19820000167
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