NASA NTRS · 19820000220
Technique for Crystal-Ribbon Growth
Abstract
Single-crystal ribbon of silicon or other material is grown by pulling at low angle from shallow melt. By pulling crystal at small angle, technique prevents overflow problem experienced with horizontal growth. Also creates meniscus that minimizes growth defects in main portion of ribbon. Use of shallow pool prevents convection problems.
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Jewett, D. N., Bates, H. E.. 1983-03-01. Technique for Crystal-Ribbon Growth. https://ntrs.nasa.gov/citations/19820000220
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