NASA NTRS · 19820000347
InGaAsP CW Lasers on (110) InP Substrates
Abstract
Quality InGaAsP/InP CW laser structures grown by conventional liquidphase epitaxy on (110) InP substrates without using special growth procedures. Improved surface quality and grown-layer morphology are attributable to nearlyperfect surface stoichiometry of (110) surface which makes available equal numbers of In and P deposition sites.
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Hawrylo, F. Z.. 1983-05-01. InGaAsP CW Lasers on (110) InP Substrates. https://ntrs.nasa.gov/citations/19820000347
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