Wipe Melt for InP Seed Substrate

Abstract

Seed substrate pulled under InGaAsP wipe melt at temperature of 650 degrees C for approximately 15 to 60 seconds. After pullthrough and meltback, surface has high smoothness and luster without meniscus lines, exaggerated erosion, pits, and pearls characteristic of other wipe melts. Layer-to-substrate interface structure is more planar and of better quality. New combination of elements leaves smooth high luster surface.