NASA NTRS · 19820007451
Reliability study of refractory gate gallium arsenide MESFETS
Abstract
Refractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.
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Yin, J. C. W., Portnoy, W. M.. 1981-01-01. Reliability study of refractory gate gallium arsenide MESFETS. https://ntrs.nasa.gov/citations/19820007451
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