NASA NTRS ยท 19820009762
DOE/JPL advanced thermionic technology program
Abstract
Accomplishments in the DOE program include: continuing stable output from the combustion life test of the one-inch diameter hemispherical silicon carbine diode (Converter No. 239) at an emitter temperature of 1730 K for a period of over 4200 hours; construction of four diode module completed; favorable results obtained from TAM combustor-gas turbine system analyses; and obtained a FERP work function of 2.3 eV with the W(100)-O-Zr-C electrode. JPL program accomplishments include: the average minimum barrier index of the last six research diodes built with sublimed molybdenum oxide collectors was 20 eV (WHK).
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1980-01-01. DOE/JPL advanced thermionic technology program. https://ntrs.nasa.gov/citations/19820009762
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