NASA NTRS · 19820024985
III-V semiconductor solid solution single crystal growth
Abstract
The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.
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Gertner, E. R.. 1982-02-01. III-V semiconductor solid solution single crystal growth. https://ntrs.nasa.gov/citations/19820024985
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