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NASA NTRS · 19830000268

Ti/Pd/Cu Contacts for Semiconductor Devices

Abstract

Copper systems equivalent in performance to silver or gold systems. Titanium layer and palladium layer deposited on semiconductor device by electron beam evaporation. Desired pattern etched using photoresist. Thin layer of copper plated on contact pattern from cyanide solution. Copper layer then built up to 4 to 8 microns by electroplatng from acid solution.

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Campbell, R. B., Rohatgi, A.. 1984-04-01. Ti/Pd/Cu Contacts for Semiconductor Devices. https://ntrs.nasa.gov/citations/19830000268

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