NASA NTRS · 19830000269
Improved High-Current Drive Circuit
Abstract
Uses VMOS field-effect power transistor. High-current drive circuit employs n-channel enhancement-mode VMOS field-effect power transistor to eliminate problem of oscillation at high power encountered in conventional circuits with bipolar transistors. Drive voltage required is typically 1 to 3 V for load current of 10 A.
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Cole, S. W.. 1984-04-01. Improved High-Current Drive Circuit. https://ntrs.nasa.gov/citations/19830000269
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