NASA NTRS · 19830000472
Growing Single Crystals From Low-Purity Silicon
Abstract
Heat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.
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Schmid, F.. 1984-04-01. Growing Single Crystals From Low-Purity Silicon. https://ntrs.nasa.gov/citations/19830000472
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