NASA NTRS · 19830000705
Modified Fabrication for InGaAsP Strip Laser
Abstract
Improved fabrication of InGaAsP stripe lasers involves replacement of oxide stripe in quaternary laser by an n-type layer of InP grown on top of quaternary cap layer. Process allows use of stop etch that selectively removes InP and does not etch InGaAsP, making fabrication especially convenient.
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Ladany, I., Furman, T. R.. 1984-12-01. Modified Fabrication for InGaAsP Strip Laser. https://ntrs.nasa.gov/citations/19830000705
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