NASA NTRS · 19830000730
Purifying Silicon During Crystal Growth
Abstract
Direct current applied to molten silicon during crystallization causes impurities to migrate away from interface of growing crystal. Method improves purity of crystal without interfering with growth process or requiring additional operator attention.
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Shlichta, P. J.. 1984-12-01. Purifying Silicon During Crystal Growth. https://ntrs.nasa.gov/citations/19830000730
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