Silicon solar cell process development, fabrication and analysis

Abstract

For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For the two specific UCP ingots, ingot #5848-13C displayed severe impurity effects as shown by lower 3sc in the middle of the ingot and low CFF in the top of the ingot. Also the middle portions of this ingot responded to a series of progressively more severe gettering diffusion. Unexplained was the fact that severely gettered samples of this ingot displayed a negative light biased effect on the minority carrier diffusion length while the nongettered or moderately gettered ones had the more conventional positive light biased effect on diffusion length. On the other hand, ingot C-4-21A did not have the problem of ingot 5848-13C and behaved like to the randomly selected wafers. The top half of the ingot was shown to be slightly superior to the bottom half, but moderate gettering helped to narrow the gap.