NASA NTRS · 19830038771
Residual double acceptors in bulk GaAs
Abstract
By using infrared absorption, photoluminescence, and Hall measurements we have observed an additional level associated with a residual acceptor in liquid encapsulated Czochralski GaAs. These results indicate that the defect is a double acceptor with levels 78 and 200 meV above the valence band.
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Elliott, K. R.. 1983-02-01. Residual double acceptors in bulk GaAs. https://ntrs.nasa.gov/citations/19830038771
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