Maximization of Growth Rates During Czochralski Pulling

Abstract

It was suggested from theory(1-4) that silicon can be grown from the melt at rates far exceeding the current state of the art. Previous theoretical and experimental investigations which predict maximum rates of pulling during Czochralski growth are reviewed. Several experimental methods are proposed to modify the temperature distribution in a growing crystal to achieve higher rates of pulling. A physical model of a Czochralski crystal of germanium in contact with its melt was used to quantitatively determine, by direct measurement of the axial temperature distribution in the solid, the increase in axial temperature gradients effected by an inverted conical heat reflector located above the melt and coaxially about the physical model. Preliminary results indicate that this is an effective method of increasing the thermal resistance between the hot melt and crucible wall and a growing crystal. Under these conditions the enhancement of the interfacial temperature gradients permit a commensurate increase in the rate of crystal pulling.