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NASA NTRS ยท 19840021021

High density circuit technology, part 3

Abstract

Dry processing - both etching and deposition - and present/future trends in semiconductor technology are discussed. In addition to a description of the basic apparatus, terminology, advantages, glow discharge phenomena, gas-surface chemistries, and key operational parameters for both dry etching and plasma deposition processes, a comprehensive survey of dry processing equipment (via vendor listing) is also included. The following topics are also discussed: fine-line photolithography, low-temperature processing, packaging for dense VLSI die, the role of integrated optics, and VLSI and technology innovations.

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BibTeXRIS

Wade, T. E.. 1982-03-01. High density circuit technology, part 3. https://ntrs.nasa.gov/citations/19840021021

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